This dataset is for the paper titled "Phase Change Memory by GeSbTe Electrodeposition in Crossbar Arrays" which is published in Applied Electronic Materials, 2021. https://doi.org/10.1021/acsaelm.1c00491.

Yasir J. Noori, Lingcong Meng, Ayoub H. Jaafar, Wenjian Zhang, Gabriela P. Kissling, Yisong Han, Nema Abdelazim, Mehrdad Alibouri, Kathleen LeBlanc, Nikolay Zhelev, Ruomeng Huang, Richard Beanland, David C. Smith, Gillian Reid, Kees de Groot, Philip N. Bartlett.

The dataset contains excel files containing the data for

Figure 2: (b) The consecutive CV scans taken using a TiN microelectrode array in a solution containing 2.5 mM of [NnBu4] GeCl6, 1 mM [NnBu4] SbCl4 and 2 mM [NnBu4]2TeCl6.
Figure 5: (a) I-V curves showing 15 voltage sweeps demonstrating phase switching of a micro device in a 10×1 array from its high resistance state (amorphous phase) to its low resistance state (crystalline phase). After every SET operation, the device was RESET using a 5V, 100 ns pulse with a 10 ns rise and fall time. (b) A graph showing the on/off resistance ratio for another device with a demonstrable endurance of around 80 cycles. Resistance distribution of the RESET (c) and SET (d) states. (e) A demonstration of the transition of a device to its low resistance state as the SET pulse width is changed showing that a pulse width greater than 50 µs is needed to induce a reduction in the device’s resistance state.